JPH0346502Y2 - - Google Patents

Info

Publication number
JPH0346502Y2
JPH0346502Y2 JP1984100388U JP10038884U JPH0346502Y2 JP H0346502 Y2 JPH0346502 Y2 JP H0346502Y2 JP 1984100388 U JP1984100388 U JP 1984100388U JP 10038884 U JP10038884 U JP 10038884U JP H0346502 Y2 JPH0346502 Y2 JP H0346502Y2
Authority
JP
Japan
Prior art keywords
resistor
diffusion region
insulating film
substrate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984100388U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115755U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10038884U priority Critical patent/JPS6115755U/ja
Publication of JPS6115755U publication Critical patent/JPS6115755U/ja
Application granted granted Critical
Publication of JPH0346502Y2 publication Critical patent/JPH0346502Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10038884U 1984-07-03 1984-07-03 抵抗体内蔵半導体装置 Granted JPS6115755U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10038884U JPS6115755U (ja) 1984-07-03 1984-07-03 抵抗体内蔵半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10038884U JPS6115755U (ja) 1984-07-03 1984-07-03 抵抗体内蔵半導体装置

Publications (2)

Publication Number Publication Date
JPS6115755U JPS6115755U (ja) 1986-01-29
JPH0346502Y2 true JPH0346502Y2 (en]) 1991-10-01

Family

ID=30659847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10038884U Granted JPS6115755U (ja) 1984-07-03 1984-07-03 抵抗体内蔵半導体装置

Country Status (1)

Country Link
JP (1) JPS6115755U (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102995U (en]) * 1989-02-06 1990-08-16

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951549A (ja) * 1982-09-17 1984-03-26 Nec Corp 集積回路装置の製造方法

Also Published As

Publication number Publication date
JPS6115755U (ja) 1986-01-29

Similar Documents

Publication Publication Date Title
US4920401A (en) Bipolar transistors
US4280854A (en) Method of manufacturing a semiconductor device having conductive and insulating portions formed of a common material utilizing selective oxidation and angled ion-implantation
JPH0897310A (ja) 半導体集積回路装置の製造方法
US3432920A (en) Semiconductor devices and methods of making them
US4732872A (en) Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide
US3424627A (en) Process of fabricating a metal base transistor
KR920007448B1 (ko) 반도체장치 및 그 제조방법
US3454846A (en) High frequency transistor having a base region substrate
JPH0346502Y2 (en])
US4985367A (en) Method of manufacturing a lateral transistor
JP2695812B2 (ja) 半導体装置
JP2000252290A (ja) 半導体装置とその製造方法
JPS605068B2 (ja) Ｍｏｓ形半導体装置
JP2719569B2 (ja) 半導体装置
JP2668528B2 (ja) 半導体装置の製造方法
JPH0213829B2 (en])
JPH0654794B2 (ja) 半導体集積回路
JPH02192724A (ja) 半導体装置およびその製造方法
JPH0982747A (ja) 半導体装置のパッド電極構造及びその製造方法
KR0152897B1 (ko) 바이폴라소자 및 그 제조방법
JPS61150376A (ja) 半導体装置
KR930007586Y1 (ko) 타이타늄 실리사이드를 이용한 다층 금속층 구조
JP2850639B2 (ja) 半導体装置
JPH0157506B2 (en])
KR940016486A (ko) 반도체 접속장치 제조방법